WF4M32-XXX5
AC CHARACTERISTICS for G4T and H2 Packages – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 5.0V, TA = -55°C to +125°C)
Parameter
Symbol
Write Cycle Time
tAVAV
tWC
Chip Select Setup Time
tELWL
tCS
Write Enable Pulse Width
tWLWH
tWP
Address Setup Time
tAVWL
tAS
Data Setup Time
tDVWH
tDS
Data Hold Time
tWHDX
tDH
Address Hold Time (1)
tWLAX
tAH
Write Enable Pulse Width High (2)
tWHWL
tWPH
Duration of Byte Programming Operation (3)
tWHWH1
Sector Erase (4)
tWHWH2
Read Recovery Time before Write
tGHWL
VCC Setup Time
tVCS
Chip Programming Time
Chip Erase Time (5)
Output Enable Hold Time (6)
tOEH
RESET Pulse Width
tRP
NOTES:
1. A21 must be held constant until WE or CS go high, whichever occurs first.
2. Guaranteed by design, but not tested.
3. Typical value for tWHWH1 is 7µs.
4. Typical value for tWHWH2 is 1sec.
5.Typical value for Chip Erase Time is 32sec.
6. For Toggle and Data Polling.
-100
Min
Max
100
0
45
0
45
15
45
20
300
15
0
50
44
256
10
500
-120
-150
Unit
Min
Max
Min
Max
120
150
ns
0
0
ns
50
50
ns
0
0
ns
50
50
ns
15
15
ns
50
50
ns
20
20
ns
300
300
µs
15
15
sec
0
0
µs
50
50
µs
44
44
sec
256
256
sec
10
10
ns
500
500
ns
AC CHARACTERISTICS for G4T and H2 Packages – READ-ONLY OPERATIONS
(VCC = 5.0V, TA = -55°C to +125°C)
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z
Output Enable High to Output High Z
Output Hold from Addresses, CS or OE Change,
whichever is First
RST Low to Read Mode
Symbol
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tRC
tACC
tCE
tOE
tDF
tDF
tOH
-100
Min
Max
100
100
100
50
35
35
0
tReady
20
-120
Min
Max
120
120
120
50
35
35
0
20
-150
Unit
Min
Max
150
ns
150
ns
150
ns
55
ns
35
ns
35
ns
0
ns
20
µs
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
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