RU20A Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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RU20A

HIGH EFFICIENCY RECTIFIER

Galaxy Semi-Conductor 

RATINGS AND CHARACTERISTIC CURVES

RU20A(Z)

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

trr

+0.5A

(+)

25VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE1)

PULSE

GENERATOR

(NOTE2)

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ

2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

0

-0.25A

-1.0A

1cm

SET TIME BASE FOR 10/20 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

20

10

TJ=25

Pulse Width=300ns

1

0.1

0.01

0.001

0.1 0.3 0.5 0.7 0.9

1.1

1.3

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.3 -- FORWARD DERATING CURVE

1.5

1.2

0.9

Single Phase

Half Wave 60Hz

Resistive or

Inductive Load

0.6

0.3

0

0

25 50 75 100 125 150

AMBIENT TEMPERATURE,

FIG.4 -- PEAK FORWARD SURGE CURRENT

50

8.3ms Single Half

40

Sine-Wave

30

20

10

0

1

5

10

50

NUMBER OF CYCLES AT 60Hz

FIG.5--TYPICAL JUNCTION CAPACITANCE

200

100

60

40

20

10

4

　　　　 TJ=25

2

1

0.1 0.2 0.4 1 2 4

10 20 40 100

REVERSE VOLTAGE,VOLTS

Document Number 0262041

BL　 GALAXY ELECTRICAL

www.galaxycn.com

2.

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