RMB2S - RMB6S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance per diode
SYMBOL
RӨJA
TYP
85
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode (1)
CONDITIONS
IF = 0.4A, TJ = 25°C
SYMBOL
VF
Reverse current @ rated VR per diode (2) TJ = 25°C
IR
TJ = 125°C
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
1 MHz, VR=4.0V
CJ
IF=0.5A,IR=1.0A
trr
IRR=0.25A
TYP
-
-
-
13
-
MAX
1
5
100
-
150
UNIT
V
µA
µA
pF
ns
ORDERING INFORMATION
PART NO.
RMBxS
(Note 1, 2)
PART NO.
SUFFIX(*)
H
PACKING
CODE
RC
MC
PACKING CODE
SUFFIX
G
Notes:
1. "x" defines voltage from 200V (RMB2S) to 600V (RMB6S)
2. Whole series with green compound (halogen-free)
*: Optional available
PACKAGE
PACKING
MBS
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
RMB2SHRCG
PART NO.
RMB2S
PART NO.
SUFFIX
H
PACKING
CODE
RC
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
AEC-Q101 qualified
2
Version: H1810