PHM12NQ20T Просмотр технического описания (PDF) - Philips Electronics
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PHM12NQ20T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
4
ID
(A)
3
10 V
4.5 V
2
003aaa236
4V
8
ID
(A)
6
4
003aaa237
Tj = 150 °C
25 °C
1
3.8 V
2
VGS = 3.6 V
0
0
0.5
1
1.5
2
VDS (V)
0
0
1
2
3
4
5
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
400
003aaa238
3
RDSon
3.8 V VGS = 4 V
(mΩ)
a
300
2
03al52
200
4.5 V
100
5V
10 V
0
0
2
4
6
8
ID (A)
1
0
-60
0
60
120
180
Tj (°C)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -R---D----RS---oD---n-S-(--o2--5-n--°--C---)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10876
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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