PHM12NQ20T Просмотр технического описания (PDF) - Philips Electronics
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PHM12NQ20T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa15
120
Ider
(%)
80
03aa23
40
40
0
0
50
100
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (°C)
VGS ≥ 10 V
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
102
ID
Limit RDSon = VDS/ID
(A)
10
DC
1
10-1
tp = 10µs
1 ms
10 ms
100 ms
003aaa354
10-2
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10876
Preliminary data
Rev. 01 — 30 January 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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