NTE451 Просмотр технического описания (PDF) - NTE Electronics

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NTE451

Silicon N–Channel JFET Transistor VHF/UHF Amplifier

NTE Electronics 

Electrical Characteristics Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Functional Characteristics

Noise Figure

NF VDS = 15V, ID = 4mA, f = 100MHz –

–

2

dB

RG  1kΩ

f = 400MHz – – 4 dB

Common Source Power Gain

Gps VDS = 15V, ID = 4mA f = 100MHz 18 – 30 dB

f = 400MHz 10 – 20 dB

.135 (3.45) Min

.210

(5.33)

Max

Seating Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

DSG

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

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