NDP08N60ZG Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

NDP08N60ZG

N-Channel Power MOSFET 600 V, 0.95 Ω

ON Semiconductor 

NDF08N60Z, NDP08N60Z

100

VGS v 30 V

SINGLE PULSE

10 TC = 25°C

1

1 ms 100 ms 10 ms

10 ms

dc

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area NDF08N60Z

1000

10

DUTY CYCLE = 0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

0.01

1E−06

SINGLE PULSE

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N60Z

RqJC = 3.6°C/W

Steady State

1E+02 1E+03

LEADS

HEATSINK

0.110″ MIN

Figure 14. Isolation Test Diagram

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

Order Number

NDF08N60ZG

NDP08N60ZG

Package

TO−220FP

(Pb−Free)

TO−220AB

(Pb−Free)

Shipping

50 Units / Rail

50 Units / Rail

(In Development)

http://onsemi.com

5

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