NDD03N60Z-1G Просмотр технического описания (PDF) - ON Semiconductor
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NDD03N60Z-1G Datasheet PDF : 10 Pages
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NDF03N60Z, NDP03N60Z, NDD03N60Z
THERMAL RESISTANCE
Junction−to−Case (Drain)
Parameter
NDP03N60Z
NDF03N60Z
NDD03N60Z
Symbol
RqJC
Junction−to−Ambient Steady State
(Note 3) NDP03N60Z
(Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z−1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
600
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
25°C
150°C
IDSS
Gate−to−Source Forward Leakage
VGS = ±20 V
IGSS
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 1.2 A
RDS(on)
Gate Threshold Voltage
Forward Transconductance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VGS(th)
3.0
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 300 V, ID = 3.0 A,
VGS = 10 V
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 3.0 A,
VGS = 10 V, RG = 5 W
Fall Time
td(on)
tr
td(off)
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 3.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 3.0 A, di/dt = 100 A/ms
Qrr
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
Value
1.6
5.0
2.0
51
51
40
80
Typ
0.6
3.3
2.0
312
39
8
12
2.5
6.1
6.0
9
8
16
10
265
0.9
Max
1
50
±10
3.6
4.5
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
W
ns
V
ns
mC
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