MMST3904(2014) Просмотр технического описания (PDF) - Diodes Incorporated.
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производитель
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Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6
200
MMST3904
Unit
V
V
V
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
Pd
RJA
Tj, TSTG
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Symbol
BVCBO
BVCEO
BVEBO
ICEX
IBL
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
hie
hre
hfe
hoe
fT
NF
Min
60
40
5
40
70
100
60
30
0.65
1
0.5
100
1
300
td
tr
Max
50
50
300
0.25
0.30
0.85
0.95
4
8
10
8.0
400
40
5
35
35
Unit
Test Condition
V IC = 10µA, IE = 0
V IC = 1mA, IB = 0
V IE = 10µA, IC = 0
nA VCE = 30V, VEB(OFF) = 3V
nA VCE = 30V, VEB(OFF) = 3V
IC = 100uA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 100mA, VCE = 1V
V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
pF
pF
kΩ
x 10-4
µS
MHz
dB
VCB = 5V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1mA,
f = 1.0MHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCC = 5V, IC = 100A,
RS = 1kΩ, f = 1MHz
ns VCC = 3V, IC = 10mA,
ns VBE(OFF) = -0.5V, IB1 = 1mA
Notes:
6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST3904
Document number: DS30082 Rev. 12 - 2
2 of 5
www.diodes.com
October 2014
© Diodes Incorporated
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