MJ802 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJ802

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ802

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A ;IB=0

VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A

VBE(sat) Base-Emitter Saturation Voltage

IC=7.5A; IB=0.75A

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff current

IC=7.5A ; VCE=2V

VCB=100V; IE=0

VCB=100V; IE=0;TC=150℃

VEB=4V; IC=0

hFE

DC Current Gain

IC=7.5A ; VCE=2V

fT

Current-Gain—Bandwidth Product IC=1A;VCE=10V;f=1.0MHz

MIN TYP MAX UNIT

90

V

0.8

V

1.3

V

1.3

V

1.0

5.0

mA

1.0 mA

25

100

2.0

MHz

isc Website：www.iscsemi.cn

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