FX6ASJ-03-T13(2004) Просмотр технического описания (PDF) - Renesas Electronics
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FX6ASJ-03-T13 Datasheet PDF : 7 Pages
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FX6ASJ-03
Transfer Characteristics (Typical)
–10
Tc = 25°C
VDS = –10V
– 8 Pulse Test
–6
–4
–2
0
0 – 2 – 4 – 6 – 8 –10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7 Tch = 25°C
5 f = 1MHz
3 VGS = 0V
2
103
7
5
Ciss
3
2
102
Coss
7
5
Crss
3
2
–3
–5–7–100
–2–3
–5–7–101–2–3
–5–7–102
–2–3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = – 6A
–8
VDS = –10V
–6
– 20V
–4
– 25V
–2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
101
7
5
Tc = 25°C
75°C
3
125°C
2
100
7
5
3
2
–10–1 –2 –3
–5 –7 –100
VDS = – 5V
Pulse Test
–2 –3 –5 –7 –101
Drain Current ID (A)
Switching Characteristics (Typical)
102
7
5
td(off)
3
2
td(on)
101
7
5
tr
3
2
10–010–1 –2 –3
tf
Tch = 25°C
VDD = –15V
VGS = –10V
RGEN = RGS = 50Ω
–5 –7–100 –2 –3 –5 –7 –101
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
VGS = 0V
Pulse Test
–16
–12
–8
Tc = 125°C
–4
75°C
25°C
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
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