FDS4070N3_04 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS4070N3_04 Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
Single Pulse, VDD=40V, ID=15.3A
IAS
Drain-Source Avalanche Current
310 mJ
15.3
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
40
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
42
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
V
mV/°C
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2 3.9
ID = 250 µA, Referenced to 25 °C
–8
5
V
mV/°C
VGS = 10 V, ID = 15.3 A
VGS = 10 V, ID=15.3A, TJ =125°C
VDS = 10 V, ID = 15.3 A
5.5 7.5 mΩ
8
12
52
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz
2819
pF
600
pF
291
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 20 V, ID = 15.3 A,
VGS = 10 V
16 29
ns
12 22
ns
41 66
ns
29 46
ns
47 67
nC
15
nC
14
nC
FDS4070N3 Rev B2 (W)
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