FDFS6N303 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FDFS6N303

N-Channel MOSFET with Schottky Diode

Fairchild Semiconductor 

Electrical Characteristics (TA = 25 oC unless otherwise noted )

MOSFET ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

Min Typ Max Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, I D = 250 µA

30

V

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

1

µA

TJ =125°C

20

µA

IGSSF

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

100

nA

IGSSR

Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

-100 nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

1

1.7

3

V

RDS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, I D = 6 A

0.025 0.035 Ω

VGS = 4.5 V, I D = 4.8 A

0.043 0.055

gFS

Forward Transconductance

VDS = 10 V, ID = 6 A

12

S

ID(ON)

On-State Drain Current

VGS = 10 V, VDS = 5 V

15

A

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

350

pF

Coss

Output Capacitance

f = 1.0 MHz

220

pF

Crss

Reverse Transfer Capacitance

80

pF

Qg

Total Gate Charge

VDS = 15 V, ID = 6 A, VGS = 10 V

12

17

nC

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

VDD = 10 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6 Ω

7.5

15

ns

12

25

ns

tD(off)

Turn - Off Delay Time

13

25

ns

tf

Turn - Off Fall Time

6

15

ns

MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, I S = 1.3 A

SCHOTTKY DIODE CHARACTERISTICS

(Note 2)

1.3

A

0.8

1.2

V

BV

Reverse Breakdown Voltage

IR

Reverse Leakage

VF

Forward Voltage

THERMAL CHARACTERISTICS

IR = 1 mA

VR = 30 V

IF = 0.1 A

IF = 3 A

IF = 6 A

30

V

0.5

mA

280 mV

420

500

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

78

°C/W

40

°C/W

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is

guaranteed by design while RθCA is determined by the user's board design.

a. 78OC/W on a 0.5 in2

pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 125OC/W on a 0.02 in2

pad of 2oz copper.

c. 135OC/W on a 0.003 in2

pad of 2oz copper.

FDFS6N303 Rev. D3

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