D45C7 Просмотр технического описания (PDF) - Inchange Semiconductor

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D45C7

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

D45C7

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -100mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A ;IB= -100mA

ICES

Collector Cutoff Current

VCE= -70V,

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.5 V

-1.3 V

-10 μA

-100 μA

hFE-1

DC Current Gain

IC= -0.2A ; VCE= -1V

25

hFE-2

DC Current Gain

IC= -1A ; VCE= -1V

10

fT

Current-Gain—Bandwidth Product IC= -20mA;VCE= -4V;ftest= 1MHz

Switching Times

40

MHz

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= -1A; IB1= -IB2= -0.1A;

VCC= -20V

0.2 μs

0.6 μs

0.3 μs

isc Website：www.iscsemi.cn

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