BSV52 Просмотр технического описания (PDF) - NXP Semiconductors.
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BSV52 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN switching transistor
Product data sheet
BSV52
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IEBO
emitter cut-off current
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 125 °C
IC = 0; VEB = 4 V
−
−
400 nA
−
−
30 µA
−
−
100 nA
hFE
VCEsat
VBEsat
Cc
Ce
fT
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
VCE = 1 V
IC = 1 mA
25 −
−
IC = 10 mA
40 −
120
IC = 50 mA
25 −
−
IC = 10 mA; IB = 300 µA
−
−
300 mV
IC = 10 mA; IB = 1 mA
−
−
250 mV
IC = 50 mA; IB = 5 mA
−
−
400 mV
IC = 10 mA; IB = 1 mA
700 −
850 mV
IC = 50 mA; IB = 5 mA
−
−
1.2 V
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
−
4
pF
IC = ic = 0; VEB = 1 V; f = 1 MHz
−
−
4.5 pF
IC = 10 mA; VCE = 10 V; f = 100 MHz 400 500 −
MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 3 mA;
IBoff = −1.5 mA
−
−
10 ns
−
−
4
ns
−
−
6
ns
−
−
20 ns
−
−
10 ns
−
−
10 ns
2004 Jan 14
3
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