BSS138G-AE2-R Просмотр технического описания (PDF) - Unisonic Technologies

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BSS138G-AE2-R

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

Unisonic Technologies 

BSS138

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

50

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

DC

Pulse

ID

0.22

0.88

A

Power Dissipation

SOT-23-3

SOT-323

PD

0.36

0.15

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER

Junction to Ambient

SOT-23-3

SOT-323

SYMBOL

θJA

RATINGS

350

833

UNIT

°C/W

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

ON CHARACTERISTICS (Note)

Gate-Threshold Voltage

Gate Threshold Voltage Temperature

Coefficient

BVDSS

∆BVDSS/∆TJ

IDSS

IGSS

VGS(TH)

∆VGS(TH)/∆TJ

VGS=0V, ID=250µA

ID=250μA,Referenced to 25°C

VDS=50V, VGS=0V

VDS=30V, VGS=0V

VDS=0V, VGS=±20V

VDS=VGS, ID=1m A

ID=1mA, Referenced to 25°C

Static Drain–Source On–Resistance

On-State Drain Current

Forward Transconductance

RDS(ON)

ID(ON)

gFS

VGS=10 V, ID=0.22A

VGS=4.5 V, ID=0.22A

VGS=10 V, VDS=5V

VDS=10V, ID=0.22A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-ON Delay Time

Turn-ON Rise Time

Turn-OFF Delay Time

Turn-OFF Fall-Time

CISS

COSS

CRSS

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VDS=25V, VGS=0V, f=1MHz

VDS=25V, VGS=10V, ID=0.22A

VDD=30V, ID=0.29A,VGS=10V,

RG=6Ω,

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS= 0V, IS=0.44A (Note)

Max. Diode Forward Current

IS

Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%

MIN TYP MAX UNIT

50

V

72

mV/°C

0.5

0.1

µA

±100 nA

0.8 1.3 1.5 V

-2

mV/°C

0.7 3.5

1.0 6.0

Ω

0.2

A

0.12 0.5

S

27

pF

13

pF

6

pF

1.7 2.4 nC

0.1

nC

0.4

nC

2.5 5 ns

9 18 ns

20 36 ns

7 14 ns

0.8 1.4 V

0.22 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R502-271.F

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