BF904 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF904 Datasheet PDF : 14 Pages
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NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904; BF904R
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
handbook, halfpage
d
4
3
g2
g1
1
2
Top view
MAM124
s,b
BF904 marking code: %MC.
Fig.1 Simplified outline (SOT143B) and symbol.
d
handbook, halfpage
3
4
g2
g1
21
Top view
MAM125 - 1
s,b
BF904R marking code: %MD.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
−
−
−
−
22
−
−
−
TYP.
−
−
−
−
25
2.2
25
2
MAX.
7
30
200
150
30
2.6
35
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
Rev. 06 - 13 November 2007
2 of 14
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