BCW60(2007) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BCW60
(Rev.:2007)

NPN Silicon AF Transistors

Infineon Technologies 

DC Electrical Characteristics

Parameter

Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

Base-emitter voltage1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

1Pulse test: t < 300µs; D < 2%

BCW60, BCX70

Symbol

Values

Unit

min. typ. max.

VCEsat

VBEsat

VBE(ON)

-

-

-

-

-

0.58

-

0.12

0.2

0.7

0.83

0.52

0.65

0.78

V

0.25

0.55

0.85

1.05

-

0.7

-

4

2007-04-20

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