BCW60 Просмотр технического описания (PDF) - Siemens AG

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производитель

BCW60

NPN Silicon AF Transistors

Siemens AG 

BCW 60

BCX 70

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V

IC = 10 mA

BCW 60, BCW 60 FF

32

–

–

BCX 70

45

–

–

Collector-base breakdown voltage

V(BR)CB0

IC = 10 µA

BCW 60, BCW 60 FF

32

–

–

BCX 70

45

–

–

Emitter-base breakdown voltage

IE = 1 µA

V(BR)EB0 5

–

–

Collector cutoff current

ICB0

VCB = 32 V

BCW 60, BCW 60 FF

–

–

20 nA

VCB = 45 V

BCX 70

–

–

20 nA

VCB = 32 V, TA = 150 ˚C BCW 60, BCW 60 FF

–

–

20

µA

VCB = 45 V, TA = 150 ˚C BCX 70

–

–

20

µA

Emitter cutoff current

VEB = 4 V

IEB0

–

–

20 nA

DC current gain 1)

hFE

IC = 10 µA, VCE = 5 V

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

IC = 2 mA, VCE = 5 V

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

IC = 50 mA, VCE = 1 V

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

–

20

140 –

20

200 –

40

300 –

100 460 –

120 170 220

180 250 310

250 350 460

380 500 630

50

–

–

70

–

–

90

–

–

100 –

–

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

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