BCW60 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BCW60

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 10 mA, IB = 0.25 mA

VBEsat

IC = 50 mA, IB = 1.25 mA

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

BCW 60B hFE

VCE = 5 V, IC = 10 :A

BCW 60C hFE

BCW 60D hFE

BCW 60B hFE

VCE = 5 V, IC = 2 mA

BCW 60C hFE

BCW 60D hFE

BCW 60B hFE

VCE = 1 V, IC = 50 mA

BCW 60C hFE

BCW 60D hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 5 V, IC = 10 :A

VCE = 5 V, IC = 2 mA

VCE = 1 V, IC = 50 mA

Gain-Bandwidth Product – Transitfrequenz

VBEon

VBEon

VBEon

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 :A, RG = 2 kS,

f = 1 kHz, )f = 200 Hz

F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 60

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

600 mV

700 mV

–

850 mV

–

1050 mV

20

–

–

40

–

–

100

–

–

180

–

310

250

–

460

380

–

630

70

–

–

90

–

–

100

–

–

–

550 mV

–

520 mV

650 mV

780 mV

–

700 mV

–

100 MHz 250 MHz

–

–

1.7 pF

–

–

11 pF

–

–

2 dB

6 dB

RthA

420 K/W 2)

BCW 61 series

Marking – Stempelung

BCW 60B = AB BCW 60C = AC BCW 60D = AD

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

39

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