BAV99 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BAV99

High-speed double diode

Philips Electronics 

Philips Semiconductors

High-speed double diode

Product specification

BAV99

105

IR

(nA)

104

VR = 75 V

103 max

75 V

MGA884

102

25 V

typ

typ

10

0

100

Tj ( o C)

200

Fig.5 Reverse current as a function of junction

temperature.

handbook0, .h8alfpage

Cd

(pF)

0.6

MBG446

0.4

0.2

0

0

4

8

12 VR (V) 16

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 11

5

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