1PS79SB40 Просмотр технического описания (PDF) - Philips Electronics
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1PS79SB40 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
handboo1k,0h2alfpage
IF
(mA)
10
(1) (2) (3) (4)
1
10 1
MLC361 - 1
10 2
0
0.2
0.4
0.6
0.8
1.0
VF (V)
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product specification
1PS79SB40
103
handbook, halfpage
IR
(µA)
102
MLC362
(1)
10
(2)
1
10−1
10−2
0
(3)
10
20
30 VR (V) 40
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handboo1k,0h3alfpage
r diff
(Ω)
102
MLC364
10
1
10 1
1
10 IF (mA) 102
5
handbooCk, dhalfpage
(pF)
4
MLC363
3
2
1
0
0
10
20
30
40
VR (V)
f = 10 KHz.
Fig.4 Differential forward resistance as a function
of forward current; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
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