4N25 Просмотр технического описания (PDF) - Infineon Technologies

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4N25

PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupler

Infineon Technologies 

Maximum Ratings TA=25°C

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................ 60 mA

Surge Current (t≤10 µs)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage ................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 VRMS

Creepage .............................................................................................. ≥7.0 mm

Clearance ............................................................................................. ≥7.0 mm

Isolation Thickness between Emitter and Detector ............................... ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

VIO=500 V, TA=25°C...............................................................................1012 Ω

VIO=500 V, TA=100°C............................................................................ 1011 Ω

Storage Temperature................................................................ –55°C to +150°C

Operating Temperature ............................................................ –55°C to +100°C

Junction Temperature................................................................................ 100°C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane ≥1.5 mm) ...................................................... 260°C

4N25/26/27/28—Characteristics TA=25°C

Emitter

Symbol Min. Typ.

Forward Voltage*

Reverse Current*

Capacitance

Detector

VF

—

1.3

IR

—

0.1

CO

—

25

Breakdown Voltage*

ICEO(dark)*

Collector-Emitter BVCEO

30

—

Emitter-Collector BVECO

7.0 —

Collector-Base

BV CBO

70

—

4N25/26/27

—

4N28

—

5.0

10

ICBO(dark)*

Capacitance, Collector-Emitter

Package

DC Current Transfer Ratio*

4N25/26

4N27/28

—

—

2.0

CCE

—

6.0

CTR

20

50

10

30

Isolation Voltage*

4N25

4N26/27

VIO

2500 —

1500 —

4N28

500 —

Saturation Voltage, Collector-Emitter

Resistance, Input to Output*

Coupling Capacitance

Rise and Fall Times

VCE(sat)

—

—

RIO

100 —

CIO

—

0.5

tr, tf

—

2.0

* Indicates JEDEC registered values

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–54

Max. Unit

1.5 V

100 µA

—

pF

—

V

—

—

50

nA

100

20

nA

—

pF

—

%

—

—

V

—

—

0.5 V

—

GΩ

—

pF

—

µs

Condition

IF=50 mA

VR=3.0 V

VR=0

IC=1.0 mA

IE=100 µA

IC=100 µA

VCE=10 V, (base open)

VCB=10 V, (emitter open)

VCE=0

VCE=10 V, IF=10 mA

Peak, 60 Hz

ICE=2.0 mA, IF=50 mA

VIO=500 V

f=1.0 MHz

IF=10 mA

VCE=10 V, RL=100 Ω

Phototransistor, Industry Standard

March 27, 2000-00

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