2SD716 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD716

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD716

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=10mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A

VBE

Base-emitter voltage

IC=4A ; VCE=5V

ICBO

Collector cut-off current

VCB=100V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=5V

Cob

Output capacitance

IE=0 ; VCB=10V ;f=1MHz

MIN TYP. MAX UNIT

100

V

5

V

2.0

V

1.5

V

10

µA

10

µA

55

160

12

MHz

100

pF

hFE Classifications

R

O

55-110

80-160

2

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