2SD2256 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD2256

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2256

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA, RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA, IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA, IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 12A ,IB= 24mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 25A ,IB= 250mA

ICBO

Collector Cutoff current

VCB= 100V, IE= 0

ICEO

Collector Cutoff current

VCE= 100V, RBE= ∞

hFE-1

DC Current Gain

IC= 12A ; VCE= 4V

hFE-2

DC Current Gain

IC= 25A ; VCE= 4V

MIN TYP. MAX UNIT

120

V

120

V

120

V

7

V

2.0

V

3.5

V

3.0

V

4.5

V

10

μA

10

μA

2000

20000

500

isc Website：www.iscsemi.cn

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