2SD1664G-X-AB3-R Просмотр технического описания (PDF) - Unisonic Technologies
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2SD1664G-X-AB3-R Datasheet PDF : 4 Pages
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2SD1664
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation Characteristics
500
VCE =6V
200 Ta=100°C
100
Ta=25°C
50
20 Ta= 55°C
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-Emitter Voltage, VBE(V)
2000
DC Current Gain vs.Collector Current (I)
Ta=25°C
1000
500
200
VcE= 3V
100
VcE= 1V
50
12
5 10 20 50 100 200 500 1000
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (I)
0.5
Ta=25°C
0.2
0.1
IC/IB=50
0.05
IC/IB=20
IC/IB=10
0.02
0.01
12
5 10 20 50 100 200 500 1000
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics
500
4.5
2.5mA
2.0mA
mA
400
3.0mA
3.5mA
4.0mA
1.5mA
300
1.0mA
200
0.5mA
100
Ta=25°C IB =0mA
0
0
0.4 0.8
1.2
1.6
2.0
Collector-Emitter Voltage, VCE(V)
2000
1000
DC Current Gain vs.Collector Current (II)
VcE= 3V
500
200
Ta=100°C
Ta=25°C
100
50
12
Ta= -55°C
5 10 20 50 100 200 500 1000
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage vs.
Collector Current (II)
0.5
IC/ IB=10
0.2
0.1
0.05
Ta=100°C
Ta=-40°C
0.02
Ta=25°C
0.01
12
5 10 20 50 100 200 500 1000
Collector Current, IC(mA)
3 of 4
QW-R208-025.C
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