2SB1317 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SB1317

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A

VBE

Base-emitter on voltage

IC=-8A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

hFE-3

DC current gain

IC=-8A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V;f=1MHz

COB

Collector output capacitance

IE=0;f=1MHz;VCB=-10V

‹ hFE-2 classifications

Q

S

P

60-120 80-160 100-200

Product Specification

2SB1317

MIN TYP. MAX UNIT

-2.5

V

-1.8

V

-50 μA

-50 μA

20

60

200

20

20

MHz

450

pF

2

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