KSA1381 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSA1381

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-20

-16

-12

-8

-4

-0

-0

I = -140µA

B

I = -120µA

B

I = -100µA

B

I = -80µA

B

I = -60µA

B

I = -40µA

B

I = -20µA

B

I = 0µA

B

-2

-4

-6

-8

-10

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

1k

VCE = -10V

100

10

-0.1

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

1000

100

VCE = -30V

10

1

-0.1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

-10

-8

-6

-4

-2

-0

-0

IB = -60µA

IB = -50µA

IB = -40µA

IB = -30µA

IB = -20µA

IB = -10µA

IB = 0µA

-20

-40

-60

-80

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 2. Static Characteristic

-10

IC = 10 IB

-1

VBE(sat)

-0.1

VCE(sat)

-0.01

-0.1

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-160

-140

-120

-100

-80

-60

-40

-20

-0

-0.0

VCE = -10V

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], BASE-EMITTER VOLTAGE

Figure 6. Base-Emitter On Voltage

© 2008 Fairchild Semiconductor Corporation

2SA1381/KSA1381 Rev. A1

3

www.fairchildsemi.com

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