DZ23C6V2-HE3-18 Просмотр технического описания (PDF) - Vishay Semiconductors
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DZ23C6V2-HE3-18 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
DZ23-Series
Vishay Semiconductors
mA
103
102
IF 10
1
T = 100 °C
J
10-1
T = 25 °C
J
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8 1V
VF
Fig. 1 - Forward Characteristics
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1 2
18119
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
400
P
tot
300
200
100
0
0
18115
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
Ω
1000
5
4
3
rzj
2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1
2 3 4 5 10
IZ
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
103
5
4
3
Rzth 2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
Δ
V
Z
ΔT
j
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 2.1, 13-Feb-2018
3
Document Number: 85765
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