PMBD7000,235 Просмотр технического описания (PDF) - NXP Semiconductors.
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PMBD7000,235 Datasheet PDF : 13 Pages
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NXP Semiconductors
PMBD7000
Double high-speed switching diode
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 150 mA
IR
reverse current
VR = 50 V
VR = 100 V
VR = 50 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ
-
550
-
670
-
-
-
0.75
-
-
-
-
-
-
-
-
-
-
[1] -
-
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Max
700
820
1
1.1
1.25
300
500
100
1.5
4
1.75
Unit
mV
mV
V
V
V
nA
nA
μA
pF
ns
V
300
IF
(mA)
200
mbd033
single diode loaded
300
IF
(mA)
200
mbg382
(1)
(2) (3)
double diode loaded
100
100
0
0
100
Tamb (°C)
200
FR4 PCB, standard footprint
Fig 1. Forward current as a function of ambient
temperature; derating curve
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward
voltage
PMBD7000
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 16 September 2010
© NXP B.V. 2010. All rights reserved.
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