SBC846BDW1T1G Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
SBC846BDW1T1G Datasheet PDF : 11 Pages
| |||
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
V
65
−
−
45
−
−
30
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
V
80
−
−
50
−
−
30
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
V
80
−
−
50
−
−
30
−
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
6.0
−
−
6.0
−
−
5.0
−
−
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
−
15
nA
−
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
hFE
−
−
150
−
−
270
−
200
290
450
420
520
800
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
−
−
V
−
0.25
−
0.6
VBE(sat)
V
−
0.7
−
−
0.9
−
VBE(on)
mV
580
660
700
−
−
770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
MHz
−
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
pF
−
4.5
Noise Figure
NF
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
−
dB
−
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
Share Link: 