STL24N60M2 Просмотр технического описания (PDF) - STMicroelectronics
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производитель
STL24N60M2
STMicroelectronics
STL24N60M2 Datasheet PDF : 15 Pages
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Electrical characteristics
STL24N60M2
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage Drain
current
IGSS Gate-body leakage current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 9 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.186 0.210 Ω
Notes:
(1)Defined by design, not subject to production test.
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
RG
Intrinsic gate
resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz, VGS = 0 V
Min. Typ. Max. Unit
- 1060 - pF
-
55
-
pF
-
2.2
-
pF
VDS = 0 to 480 V, VGS = 0 V
- 258 - pF
f = 1 MHz open drain
-
7
-
Ω
VDD = 480 V, ID = 18 A, VGS = 10 V
-
29
-
nC
(see Figure 15: "Gate charge test
-
6
- nC
circuit")
-
12
- nC
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 9 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14:
"Switching times test circuit for
resistive load") and (Figure 19:
"Switching time waveform")
Min. Typ. Max. Unit
-
14
-
ns
-
9
-
ns
-
60
-
ns
-
15
-
ns
4/15
DocID024777 Rev 3
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