2SC4106 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

2SC4106

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Gain-Bandwidth Product

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

2SC4106

Symbol

Conditions

VCE(sat)

VBE(sat)

fT

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEX(sus)

ton

tstg

tf

IC=4A, IB=0.8A

IC=4A, IB=0.8A

VCE=10V, IC=0.8A

VCB=10V, f=1MHz

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=3A, IB1=0.3A, IB2=–1.2A, L=1mH, clamped

IC=5A, IB1=1A, IB2=–2A, RL=40Ω, VCC=200V

IC=5A, IB1=1A, IB2=–2A, RL=40Ω, VCC=200V

IC=5A, IB1=1A, IB2=–2A, RL=40Ω, VCC=200V

Ratings

min typ

20

80

500

400

7

400

max

0.8

1.5

0.5

2.5

0.3

Unit

V

V

MHz

pF

V

V

V

V

µs

µs

µs

Switching Time Test Circuit

No.2471–2/4

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