2SA1681 Просмотр технического описания (PDF) - Toshiba

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производитель

2SA1681

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

−2.4

−100 −70

−2.0

−50

−1.6

IC – VCE

−30

Common emitter

Ta = 25°C

−20

−15

−10

−1.2

−6

−0.8

−4

−0.4

IB = −2 mA

0

0

0

−1

−2

−3

−4

−5

−6

Collector-emitter voltage VCE (V)

2SA1681

hFE – IC

500

300

Ta = 100°C

25

100

−25

50

30

Common emitter

10

VCE = −2 V

5

−1 m −3 m −10 m −30 m −100 m −300 m −1

Collector current IC (A)

−3 −5

VCE (sat) – IC

−10

−5 Common emitter

−3 IC/IB = 20

−1

−500 m

−300 m

−100 m

−50 m

−30 m

Ta = 100°C

25

−25

−10 m

−1 m −3 m −10 m −30 m −100 m −300 m −1

Collector current IC (A)

−3 −5

−2.0

Common emitter

VCE = −2 V

−1.6

IC – VBE

−1.2

−0.8

Ta = 100°C 25

−25

−0.4

0

0

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2

Base-emitter voltage VBE (V)

VBE (sat) – IC

−2

−1

Ta = −25°C

−0.5

25

−0.3

100

−0.1

−1 m

−3 m

Common emitter

IC/IB = 20

−10 m −30 m −100 m −300 m −1 −3

Collector current IC (A)

Safe Operating Area

−10

−5 IC max (pulse)*

−3 IC max (continuous)

1 ms*

−1

−500 m

−300 m

−100 m

10 ms*

100 ms*

DC operation

(Ta = 25°C)

−50 m

−30 m *: Single no repetitive pulse

Ta = 25°C

−10 m

−5 m

Curves must be derated linearly

with increase in temperature.

Tested without a substrate.

VCEO max

−3 m

−100 m −300 m −1

−3

−10

−30

Collector-emitter voltage VCE (V)

−100

3

2006-11-09

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