IPI045N10N3G Просмотр технического описания (PDF) - Infineon Technologies

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производитель

IPI045N10N3G

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB042N10N3 G IPI045N10N3 G

IPP045N10N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Thermal resistance,

R thJA minimal footprint

-

junction - ambient

6 cm2 cooling area3)

-

-

0.7 K/W

-

62

-

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

100

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=150 µA

2

2.7

3.5

Zero gate voltage drain current

I DSS

V DS=100 V, V GS=0 V,

T j=25 °C

-

0.1

1 µA

V DS=100 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=100 A,

TO 220, TO 262

-

10

100

1

100 nA

3.9

4.5 mW

V GS=10 V, I D=50 A,

-

3.6

4.2

TO263

V GS=6 V, I D=50 A, TO

-

220, TO 262

4.7

7.7

Gate resistance

Transconductance

V GS=6 V, I D=50 A,

TO263

-

4.4

7.4

RG

-

1.4

-W

g fs

|V DS|>2|I D|R DS(on)max,

I D=100 A

73

145

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.8

page 2

2016-08-17

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