KSC5502DTTU Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSC5502DTTU

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min

tfr

Diode Froward Recovery

Time (di/dt=10 A/μs)

VCE(DSAT) Dynamic Saturation Voltage

IF = 0.2 A

IF = 0.4 A

IF = 1 A

IC = 0.4 A, IB1 = 80 mA,

VCC = 300 V

IC = 1 A, IB1 = 200 mA,

VCC = 300 V

at 1 μs

at 3 μs

at 1 μs

at 3 μs

Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)

tON

Turn-On Time

tOFF Turn-Off Time

tON

Turn-On Time

tOFF Turn-Off Time

Inductive Load Switching (VCC = 15 V)

tSTG Storage Time

tF

Fall Time

tC

Cross-Over Time

tSTG Storage Time

tF

Fall Time

tC

Cross-over Time

IC = 0.4 A, IB1 = 80 mA,

IB2 = 0.2 A, VCC = 300 V,

RL = 750 Ω

IC = 1 A, IB1 = 160 mA,

IB2 = 160 mA,

VCC = 300 V,

RL = 300 Ω

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

IC = 0.4 A, IB1 = 80 mA,

IB2 = 0.2 A, VZ = 300 V,

LC = 200 H

IC = 0.8 A, IB1 = 160 mA,

IB2 = 160 mA,

VCC = 300 V,

LC = 200 H

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

TC = 25°C

TC = 125°C

Typ.

650

740

785

7.2

1.8

18.0

6.0

Max.

Unit

ns

V

175 350

ns

185

2.1 3.0

μs

2.6

240 450

ns

310

3.7 5.0

μs

4.5

1.2 2.0

μs

1.5

90 200

ns

65

185 350

ns

145

3.30 4.50

μs

3.75

90 250

ns

160

300 600

ns

570

© 2000 Fairchild Semiconductor Corporation

KSC5502D / KSC5502DT Rev. 1.1.0

3

www.fairchildsemi.com

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