KSC5502DTTU Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
KSC5502DTTU Datasheet PDF : 11 Pages
| |||
July 2014
KSC5502D / KSC5502DT
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220
D-PAK
4
Equivalent Circuit
C
1
TO-220
4
B
E
1
1.Base 2,4.Collector 3.Emitter
Ordering Information
Part Number
KSC5502DTM
KSC5502DTTU
Top Mark
C5502D
C5502D
Package
TO-252 3L (DPAK)
TO-220 3L
Packing Method
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
TJ
TSTG
EAS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)(1)
Base Current (DC)
Base Current (Pulse)(1)
Junction Temperature
Storage Temperature Range
Avalanche Energy (TJ = 25°C)
1200
V
600
V
12
V
2
A
4
A
1
A
2
A
150
°C
-65 to 150
°C
2.5
mJ
Note:
1. Pulse test: Pulse width = 5 ms, duty cycle ≤ 10%.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
Share Link: 