KSC5502D(2001) Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

KSC5502D
(Rev.:2001)

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

KSC5502D/KSC5502DT

High Voltage Power Switch Switching

Application

• Wide Safe Operating Area

• Built-in Free-Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

• Two Package Choices : D-PAK or TO-220

Equivalent Circuit

C

B

D-PAK

1

TO-220

E

1

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

V CEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current (DC)

IBP

*Base Current (Pulse)

PC

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

EAS

Avalanche Energy(Tj=25°C)

* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Value

1200

600

12

2

4

1

2

50

150

- 65 ~ 150

2.5

Units

V

V

V

A

A

A

A

W

°C

°C

mJ

Thermal Characteristics TC=25°C unless otherwise noted

Symbol

Characteristics

Rθjc

Thermal Resistance

Junction to Case

Rθja

Junction to Ambient

TL

Maximun Lead Temperature for Soldering Purpose

: 1/8” from Case for 5 seconds

Rating

2.5

62.5

270

Unit

°C/W

°C

©2001 Fairchild Semiconductor Corporation

Rev. A2, August 2001

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