ZXM61N02FTA Просмотр технического описания (PDF) - Zetex => Diodes

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ZXM61N02FTA

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM61N02F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance

(1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS 20

IDSS

IGSS

VGS(th) 0.7

RDS(on)

gfs

1.3

1

100

0.18

0.24

V

ID=250µA, VGS=0V

µA VDS=20V, VGS=0V

nA VGS=± 12V, VDS=0V

V

ID=250µA, VDS= VGS

Ω

VGS=4.5V, ID=0.93A

Ω

VGS=2.7V, ID=0.47A

S

VDS=10V,ID=0.47A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

160

pF

VDS=15 V, VGS=0V,

50

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.4

ns

4.2

ns VDD =10V, ID=0.93A

7.8

ns

RG=6.2Ω, RD=11Ω

(refer to test

4.2

ns circuit)

3.4

0.41

0.8

nC

V D S= 16 V , V GS= 4 . 5V ,

nC ID=0.93A

(refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

12.9

Reverse Recovery Charge (3)

Qrr

5.2

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

TJ=25°C, IS=0.93A,

V G S= 0V

ns TJ=25°C, IF=0.93A,

di/dt= 100A/µs

nC

ISSUE 1 - JUNE 2004

4

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