WS57C49C-35T Просмотр технического описания (PDF) - STMicroelectronics

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WS57C49C-35T

HIGH SPEED 8K x 8 CMOS PROM/RPROM

STMicroelectronics 

WS57C49C

PROGRAMMING INFORMATION

DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

SYMBOLS

PARAMETER

MIN

MAX

ILI

Input Leakage Current

(VIN = VCC or Gnd)

IPP

VPP Supply Current During

Programming Pulse

ICC

VCC Supply Current

VOL

Output Low Voltage During Verify

(IOL = 16 mA)

VOH

Output High Voltage During Verify

(IOH = –4 mA)

–10

10

60

35

0.45

2.4

NOTES: 7. VPP must not be greater than 13 volts including overshoot.

AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

SYMBOLS

PARAMETER

MIN

TYP

MAX

tAS

Address Setup Time

2

tDF

Chip Disable Setup Time

30

tDS

Data Setup Time

2

tPW

Program Pulse Width

100

200

tDH

Data Hold Time

2

tCS

Chip Select Delay

30

tRF

VPP Rise and Fall Time

1

PROGRAMMING WAVEFORM

UNITS

µA

mA

mA

V

V

UNITS

µs

ns

µs

µs

µs

ns

µs

VIH

ADDRESSES

VIL

VIH

DATA

VIL

tDF

VPP

VIH

CS1/VPP

VIL

tAS

tDS

ADDRESS STABLE

DATA IN

tPW

tDH

DATA OUT

tCS

tRF

tRF

2-44

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