VRF151G Просмотр технического описания (PDF) - Microsemi Corporation
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VRF151G Datasheet PDF : 4 Pages
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Dynamic Characteristics
Symbol
Parameter
Test Conditions
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 50V
f = 1MHz
Functional Characteristics
Symbol
Parameter
GPS
f = 175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W
ηD
f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W
ψ
f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
VRF151G
Min
Typ
Max
Unit
375
200
pF
12
Min
Typ
Max Unit
14
16
dB
50
55
%
No Degradation in Output Power
Typical Performance Curves
25
14V
20
10V
9V
8V
15
7V
10
6V
5V
5
VGS = 4V
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
1.0E−9
1.0E−10
Ciss
Coss
1.0E−11
0
10 20
Crss
30 40 50 60
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
30
250μs PULSE
TEST<0.5 % DUTY
CYCLE
25
TJ= -55°C
20
TJ= 25°C
15
10
TJ= 125°C
5
0
0
2
4
6
8 10 12
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
100
IDMax
10
Rds(on)
PD Max
TJ = 125°C
TC = 75°C
1
1
10
100 250
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
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