SHF-0189 Просмотр технического описания (PDF) - Stanford Microdevices

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производитель

SHF-0189

DC-3 GHz, 0.5 Watt GaAs HFET

Stanford Microdevices 

PrPerleimliminianrayry

SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET

1900 MHz Application Circuit at 25° C (Vds=8V, Idq=100mA)

Microstrip Segment Specifications

Ref. desig. Value Part Number /Style

Cd1,9

1000 pF ROHM MCH18 series

Cd2,3,6,12 33 pF ROHM MCH18 series

Cd4,7

8.2 pF ROHM MCH18 series

Cd5,10

0.1 uF TANTALUM, size"A", 35 volt

Cd8,11

100 pF ROHM MCH18 series

CM1

2.7 pF ROHM MCH18 series

CM2

1.0 pF ROHM MCH18 series

LM1

2.2 nH TOKO LL1608-FH2N2K

Lbias1

10 nH TOKO LL1608-FH10NT

Lbias2

22 nH TOKO LL1608-FH22NT

Rstab1

5.1 ohms size 0603

Rstab2

10 ohms size 0603

Ref. desig. Value

Z1

50 ohms, 5.0 deg. @ 1900 MHz

Z2

50 ohms, 8.4 deg. @ 1900 MHz

Z3

50 ohms, 3.8 deg. @ 1900 MHz

Z4

50 ohms, 3.8 deg. @ 1900 MHz

Z5

50 ohms, 8.6 deg. @ 1900 MHz

Phase shift functional block between components

are calculated based on wavelength of 1900 MHz

signal on FR4 board material with dielectric con-

stant of 4.1, microstrip width and height dimen-

sions of W=.054 inch and h= .031 inch.

Test Data @ 1.9 GHz

P1dB(dBm) IP3(dBm) Output tone Level (dBm)

27.0

40.2

11

8

Ω

30

25

20

15

10

0

Pout vs. Pin T=25°C

4

8

12

16

Pin (dBm)

Drain Efficiency & I vs. P

D

out

T=25°C

80

160

60

40

ID

140

120

20

100

D ra in E ffic ie n c y

0

80

15 18 21 24 27 30

Pout (dBm)

S11 & S22 vs. Frequency T=25°C

0

-5

S22

-10

-15

-20

S11

S & S vs. Frequency

21

12

T=25°C

0

S21

5

-22

0

-27

5

S12

-25

0

-32

1.5 1.7 1.9 2.1 2.3

1.5 1.7 1.9 2.1 2.3

Frequency (GHz)

Frequency (GHz)

Note: s-parameters determined using applications circuit shown above

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

5

http://www.stanfordmicro.com

EDS-101240 Rev A

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