UPA1793 Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPA1793

SWITCHING N- AND P-CHANNEL POWER MOS FET

NEC => Renesas Technology 

µPA1793

ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)

www.DataSheet4U.com

A) N-Channel

Characteristice

Symbol

Test Conditions

MIN. TYP. MAX. Unit

Zero Gate Voltage Drain Current

Gate Leakage Current

IDSS

VDS = 20 V, VGS = 0 V

IGSS

VGS = ±12 V, VDS = 0 V

10 µA

±10 µA

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

0.5 1.0 1.5 V

Forward Transfer Admittance

Drain to Source On-state Resistance

| yfs |

RDS(on)1

RDS(on)2

VDS = 10 V, ID =1.5 A

VGS = 4.5 V, ID = 1.5 A

VGS = 4.0 V, ID = 1.5 A

1.0

S

55 69 mΩ

57 72 mΩ

RDS(on)3 VGS = 2.5 V, ID = 1.0 A

78 107 mΩ

Input Capacitance

Ciss

VDS = 10 V

160

pF

Output Capacitance

Coss

VGS = 0 V

60

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

40

pF

Turn-on Delay Time

td(on)

VDD = 10 V, ID = 1.5 A

17

ns

Rise Time

tr

VGS = 4.0 V

50

ns

Turn-off Delay Time

td(off)

RG = 10 Ω

86

ns

Fall Time

tf

80

ns

Total Gate Charge

QG

VDD = 16 V

3.1

nC

Gate to Source Charge

QGS

VGS = 4.0 V

0.7

nC

Gate to Drain Charge

QGD ID = 3.0 A

1.4

nC

Body Diode Forward Voltage

VF(S-D) IF = 3.0 A, VGS = 0 V

0.86

V

Reverse Recovery Time

trr

IF = 3 A, VGS = 0 V

70

ns

Reverse Recovery Charge

Qrr

di/dt = 50 A/µs

12

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

90%

VGS

90%

10% 10%

tr td(off)

tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

DataSheet G16059EJ1V0DS

3

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