TPD1039F Просмотр технического описания (PDF) - Toshiba

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производитель

TPD1039F

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Toshiba 

Test Circuit 3

Overcurrent detection circuit

Test circuit

ID

A

DRAIN

IN

TPD1039F

P.G.

VIN

SOURCE

VDD = 24 V

Test Circuit 4

Switching time measuring circuit

Test circuit

P.G.

RL = 24Ω

DRAIN

IN

TPD1039F

VDD = 24 V

VIN

SOURCE

TPD1039F

Measured waveforms

VIN

0V

ID

0A

≤ 0.1μs

≤ 0.1μs

90%

90%

5V

10%

10%

IOC

Measured waveforms

VIN

0V

VDS

0V

≤ 0.1μs

≤ 0.1μs

90%

90%

5V

10%

90%

10%

90%

24 V

10%

tr

ton

10%

tf

toff

5

2008-03-18

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