TFDS6502E Просмотр технического описания (PDF) - Vishay Semiconductors

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TFDS6502E

Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

Vishay Semiconductors 

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Vishay Semiconductor

Electrical Characteristics

Tamb = 25_C, VCC = 2.6V to 5.5 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters

Test Conditions / Pins Symbol Min.

Typ. Max. Unit

Transceiver

Supply Voltage

VCC

2.6

5.5

V

Dynamic Supply Current Receive mode only.

In transmit mode, add additional 85 mA (typ) for IRED current

SD = Low, Ee = 0 klx

ICC

SD = Low, Ee = 1 klx *)

ICC

Standby Supply Current

SD = High,

ISD

Mode = Floating,

T = 25°C, Ee = 0 klx

T = 25°C, Ee = 1 klx *)

SD = High, T = 85°C,

ISD

Mode = Floating,

Not Ambient Light

Sensitive

3

4.5

mA

3

4.5

mA

1

µA

1.5

µA

5

µA

Operating Temperature

Range

TA

–25

+85

°C

Output Voltage Low

Output Voltage High

Input Voltage Low

(Txd, SD/ Mode, Mode)

Rload = 2.2 kW,

Cload = 15 pF

Rload = 2.2 kW,

Cload = 15 pF

VOL

0.5

0.8

V

VOH VCC–0.5

V

VIL

0

0.8

V

Input Voltage High

(Txd, SD/ Mode, Mode)

Input Leakage Current

(Txd, SD/ Mode)

CMOS level **)

TTL level, VCC ≥ 4.5 V

VIH 0.9 x VCC

VIH

2.4

IL

–10

V

V

+10

µA

Input Leakage Current,

Mode

IL

–80

+80

µA

Input Capacitance

CI

5

pF

*) Standard Illuminant A

**) The typical threshold level is between 0.5 x VCC/2 (VCC = 3 V) and 0.4 x VCC (VCC = 5.5 V) .

It is recommended to use the specified min/ max values to avoid increased operating current.

Document Number 82526

Rev. B1.6, 02–Nov–00

www.vishay.com

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