TEA1102TS/N3 Просмотр технического описания (PDF) - Philips Electronics

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производитель

TEA1102TS/N3

Fast charge ICs for NiCd, NiMH, SLA and LiIon

Philips Electronics 

Philips Semiconductors

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

Preliminary specification

TEA1102; TEA1102T;

TEA1102TS

CHARACTERISTICS

VP = 10 V; Tamb = 25 °C; Rref = 62 kΩ; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

Supplies; pins VP, VS, Rref and Vsl

VP

IP

Istb

Vclamp

Vstart

VLSP

VS

VSL

Vref

TCVref

∆Vref/∆VP

∆Vref

supply voltage

supply current

standby current

clamping voltage (pin 12)

start voltage

outputs off; VP = 11.5 V

VP = 4 V

Iclamp = 30 mA

low supply protection level

source voltage (stabilized)

LED source voltage

reference voltage

temperature coefficient of the

reference voltage

power supply rejection ratio of

the reference voltage

load rejection of source

voltage

IS = 2 mA

ILED = 50 µA

Iref = 20 µA; VP = 10 V

Tamb = 0 to 45 °C;

Iref = 20 µA; Vref = 1.25 V

f = 100 Hz; VP = 8 V;

∆VP = 2 V (p-p)

∆IS = 20 mA; VP = 10 V

IRref

current range of reference

resistor

5.5

−

−

11.5

6.1

5.1

4.14

4.05

1.21

0

−46

−

10

Charge current regulation; pins IB and Rref

IIB/Iref

VthIB

IIB

IIB(max)

IIB(Lmax)

IIB(LI)

fast charge ratio

threshold voltage at pin IB

charge current

maximum charge current

maximum load current

input leakage current

VIB = 0

Iref = 10 µA

Iref = 100 µA

Tamb = 25 °C

Tamb = 0 to 45 °C

top-off mode; VIB = 0

voltage regulation full

NiCd/NiMH battery; VIB = 0

open battery; VIB = 0

currentless mode

Refresh; pin RFSH

VRsense

VRFSH

sense resistor voltage

refresh voltage for

programming start of refresh

Irefresh = VIB/ Rsense; refresh

mode; Irefresh = 18 mA

NiCd/NiMH

Vbat

voltage at pin Vbat for

NiCd/NiMH

detecting end of refresh

Isource(max) maximum source current

VIB = 75 mV; VP = 10 V;

VRFSH = 2.7 V; Tamb = 25 °C

0.93

0.93

−2

−3

2.6

9

34

−

75

0

0.96

1.4

TYP.

−

4

35

−

6.4

5.3

4.25

4.25

1.25

±60

−

−

−

1.03

1.0

−

−

3.2

10.5

42

−

100

−

1.0

2

MAX. UNIT

11.5

6

45

12.8

6.7

5.5

4.36

4.45

1.29

±120

−

5

100

V

mA

µA

V

V

V

V

V

V

ppm/K

dB

mV

µA

1.13

1.07

+2

mV

+3

mV

3.8

µA

12

µA

50

µA

170

nA

125

mV

250

mV

1.04

V

2.6

mA

1999 Jan 27

13

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