TA2003FG Просмотр технического описания (PDF) - Toshiba
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TA2003FG Datasheet PDF : 11 Pages
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TA2003PG/FG
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
Power dissipation
DIP−16
SSOP−16
Operating temperature
Storage temperature
VCC
8
V
750
PD (Note)
mW
350
Topr
−25~75
°C
Tstg
−55~150
°C
(Note) Derated above Ta = 25°C in the proportion of 6mW / °C for TA2003PG and of 2.8mW / °C for TA2003FG.
Electrical Characteristics
Unless otherwise specified, Ta = 25°C, VCC = 3V, F / E: f = 98MHz, fm = 1kHz
FM IF: f = 10.7MHz, ∆f = ±22.5kHz, fm = 1kHz
AM: f = 1MHz, MOD = 30%, fm = 1kHz
Characteristic
Supply current
Input limiting voltage
Quiescent sensitivity
F/E
Local OSC voltage
Local OSC stop voltage
Input limiting voltage
Recovered output voltage
FM
IF
Signal to noise ratio
Total harmonic distortion
AM rejection ratio
Voltage gain
Recovered output voltage
AM Signal to noise ratio
Total harmonic distortion
Local OSC stop voltage
Symbol
ICC (FM)
ICC (AM)
Vin (lim)
QS
VOSC
Vstop (FM)
Vin (lim) IF
VOD
S/N
THD
AMR
GV
VOD
S/N
THD
Vstop (AM)
Test
Cir−
Test Condition
cuit
1 FM mode, Vin = 0
1 AM mode, Vin = 0
1 −3dB limiting point
1 S / N = 30dB
2 fOSC = 108MHz
2 Vin = 0
1 −3dB limiting point
1 Vin = 80dBµV EMF
1 Vin = 80dBµV EMF
1 Vin = 80dBµV EMF
1 Vin = 80dBµV EMF
1 Vin = 27dBµV EMF
1 Vin = 60dBµV EMF
1 Vin = 60dBµV EMF
1 Vin = 60dBµV EMF
1 Vin = 0
Min. Typ. Max.
Unit
―
10.5 16.5
mA
―
5.0
8.0
―
12
― dBµV EMF
―
12
― dBµV EMF
160
240
320
mVrms
―
1.2
―
V
42
47
52 dBµV EMF
50
70
90
mVrms
―
62
―
dB
―
0.4
―
%
―
33
―
dB
15
32
50
mVrms
35
60
85
mVrms
―
43
―
dB
―
1.0
―
%
―
1.6
―
V
6
2006-04-11
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