T4312816B-7S Просмотр технического описания (PDF) - Taiwan Memory Technology

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производитель

T4312816B-7S

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T4312816B

CLK

CKE

CS#

RAS#

CAS#

WE #

A11

A10

A0-A9

DQM

DQ Hi-Z

T0

T1

T2

T3

T4

T5

T6

T7

T8

T9

T10

tCK2

Clock min.

Address Key

tRP

PrechargeAll Mode Register Any

Set Command Command

Mode Register Set Cycle (CAS# Latency = 2, 3)

The mode register is divided into various fields depending on functionality.

Address BS0,1 A11,10 A9 A8 A7 A6 A5 A4 A3

Function RFU* RFU* WBL Test Mode

CAS Latency

BT

*Note: RFU (Reserved for future use) should stay “0” during MRS cycle.

A2 A1 A0

Burst Length

TM Technology Inc. reserves the right

P. 10

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

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