SUD50N06-09L Просмотр технического описания (PDF) - Unspecified
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SUD50N06-09L Datasheet PDF : 5 Pages
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SUD50N06-09L
N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 20 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.5
0.0
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
60
50
40
30
20
10
1
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1000
100
10
Safe Operating Area
Limited
by rDS(on)
1
0.1
TC = 25_C
Single Pulse
0
0
2
25 50 75 100 125 150 175
0.01
0.1
1
10
TA - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
1.5
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
0.01 10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
10
100
4/5
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