SUD50N06-07L Просмотр технического описания (PDF) - Vishay Semiconductors
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SUD50N06-07L Datasheet PDF : 4 Pages
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SUD50N06-07L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
VGS = 10 V
ID = 20 A
1.7
1.4
10
1.1
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.8
0.5
−50 −25
0 25 50 75 100 125 150 175
TJ − Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Case Temperature
125
100
1
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
Safe Operating Area
200
100
Limited by rDS(on)
10 ms
100 ms
75
10
50
Limited By Package
25
1
TC = 25_C
Single Pulse
0
0
2
25 50 75 100 125 150 175
0.1
0.1
1
10
TC − Case Temperature (_C)
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
1 ms
10 ms
dc, 100 ms
100
0.01
10−4
www.vishay.com
4
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Document Number: 72953
S-41133—Rev. A, 07-Jun-04
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